PART |
Description |
Maker |
NAND128W3A2BN6 NAND01BGR3A NAND01BGR3A0AN1T NAND01 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
M36L0R7040B0 M36L0R7040T0 |
128 Mbit Flash Memory and 16 Mbit PSRAM 1.8V Supply Multi-Chip Package
|
STMicroelectronics
|
AT52SQ1283J |
128-Mbit Flash 32-Mbit PSRAM Stack Memory.
|
Atmel
|
M48T129V-70PM1 M48T129V-85PM1 M48T129Y-70PM1 M48T1 |
5.0 or 3.3 V, 1 Mbit (128 Kbit x 8) TIMEKEEPER庐 SRAM 5.0 or 3.3 V, 1 Mbit (128 Kbit x 8) TIMEKEEPER? SRAM
|
STMicroelectronics
|
AT52SC1283J AT52SC1283J-70CI AT52SC1283J-85CI AT52 |
128-Mbit Flash 32-Mbit/64-Mbit
|
Toshiba Semiconductor ATMEL Corporation
|
M36P0R8070E0 M36P0R8070E0ZACE M36P0R8070E0ZACF |
256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package
|
Numonyx B.V
|
HYB25M144180C HYB25R144180C HYB25M128160C |
144-Mbit direct RDRAM(144 Mbit 直接 RDRAM) 144-MBit Direct RDRAM(144 M位直接RDRAM) 144兆位的直接的RDRAM144米位直接的RDRAM 128-Mbit direct RDRAM(128 Mbit ?存? RDRAM)
|
SIEMENS AG
|
IDT72V8988 IDT72V8988DB IDT72V8988J IDT72V8988J8 7 |
From old datasheet system 3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 128 x 128 128 x 128 TSI, 4 I/O at 2Mbps, Variable/Constant Delay, 3.3V
|
Integrated Device Technology IDT
|
CY14V101LA |
1-Mbit (128 K x 8/64 K x 16) nvSRAM
|
Cypress Semiconductor
|
M27C1001-12XBTR M27C1001-12XFTR M27C1001-25XBTR M2 |
1 Mbit (128 Kbit x 8) UV EPROM and OTP EPROM 1兆位128千位× 8)紫外线存储器和OTP存储 1 Mbit (128 Kbit x 8) UV EPROM and OTP EPROM 1兆位28千位× 8)紫外线存储器和OTP存储
|
意法半导 STMicroelectronics N.V.
|
CY62137FV18LL-55BVXI CY62137FV18LL-55BVXIT |
2-Mbit (128 K 16) Static RAM
|
Cypress
|
CY62128ELL-45SXAT CY62128ELL-45SXI CY62128ELL-45ZX |
1-Mbit (128 K 8) Static RAM
|
Cypress
|